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2000
Volume 1, Issue 1
  • ISSN: 2666-7312
  • E-ISSN: 2666-7339

Abstract

Cadmium Sulfide (CdS) based semiconductors are of great interest for different high-end applications because they pose a direct bandgap (2.42 eV). CdS are used as the main constituent material in many applications, namely solar cells, electroluminescent, and quantum dot light-emitting diodes. Transition metal-doped CdS revealed considerable influence in the bandgap, photoluminescence properties and peak energy upon increasing the metal content.

In this work, we study the single-phase cubic structure of CdS. Photoluminescence spectra revealed a strong blue emission peak located at about 445 nm.

We investigate the Co-doping CdS semiconductor nanoparticles prepared the chemical co-precipitation method using thiophenol as template, 300°C/2h in vacuum optimum temperature and period of annealing to yield nanosized particles. Morphology and structural studies of the particles were using XRD, and TEM, respectively.

XRD and TEM studies for the calcined samples revealed a cubic structure. The crystalline size was in the range of 10-17 nm. Thermogravimetric analysis (TGA) was employed to stabilize the temperature of annealing for the samples. The blue shift in the spectra and the band gap value of Co-doped CdS nanoparticles were estimated using UV-vis absorption spectra. Photoluminescence spectra revealed a strong blue emission peak around 445 nm indicating the presence of surface states within the bandgap region, which is a characteristic feature of nanoparticles.

XRD analysis indicated zinc blend structure and the intensity decreased with increasing Co content. TEM images show that the particles are spherical in shape with average sizes around 13 nm. Luminescence of the synthesized nanoparticles exhibited blue emission between 400 – 500 nm with the peak located at about 445 nm. The emission intensity increased with the increase in Co concentration.

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2022-04-01
2024-11-26
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  • Article Type:
    Research Article
Keyword(s): Cobalt-doped CdS; fluorescence; nanoparticles; semiconductor materials; TEM; thiophenol
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