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2000
Volume 17, Issue 5
  • ISSN: 2666-1454
  • E-ISSN: 2666-1462

Abstract

Introduction

This work represents the influence of gate dielectric, and the nano-cavity gap of a dielectric modulated trench gate Junction-less Double Gate Field Effect Transistor (JL-DGFET) on the different performance indicators is investigated considering the Low-Frequency Noise.

Methods

It is noted that the gate dielectric and the nanogap, both parameters, have a substantial influence on the sensing capacity and performance of noise of the device.

Results

A double gate suitable dielectric material and cavity thickness can effectively improve the biosensor’s sensitivity with a minimum amount of noise.

Conclusion

The sensitivity is found to increase up to 9.5 for dielectric constant, k = 3.57 and 6.5 for dielectric constant, k = 2.1.

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2023-10-20
2025-01-31
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  • Article Type:
    Research Article
Keyword(s): Biosensor; dielectric constant; dielectric modulated; drain current; JL-FET; sensitivity
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