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The efficiency of a photovoltaic cell is determined by the maximum power it can deliver to a load. Power output is a function of the fill factor. The fill factor determines the shape of the I-V characteristics of a solar cell. It is dependent on various environmental as well as internal parameters. Two major parameters that influence the fill factor are the parasitic series and shunt resistances (RS and RSH) present in a photovoltaic device.
In this regard, numerical analysis has been carried out to determine the effect of these parasitic influences on the I-V characteristics of a solar cell and to analyze the variation of the fill factor with the two parasitic resistances.
The highest recorded efficiency and other corresponding parameters for a GaAs (multicrystalline) solar cell have been used for reference while conducting the analysis. It is observed that the I-V curve flattens for decreasing values of RSH, and the fill factor decreases considerably.
It is envisioned that the attained results will pave the way for implementations ensuring higher efficiency of GaAs solar cells.