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2000
Volume 18, Issue 2
  • ISSN: 1573-4137
  • E-ISSN: 1875-6786

Abstract

Silicon quantum dots (Si QDs) with unique properties of light, electricity, magnetism, and heat possess the advantages of non-toxicity, environmental protection, and serving as abundant reserves. They are widely used in various fields and have great potential for development. Till now, numerous researchers have reported the research progress of Si QDs or elaborated the behavior mechanism. However, a few comparisons are made on the properties of a quantum dot in different fields and different preparation methods. Besides, the parameters of Si QDs vary greatly in different application fields, which are worthy of comparison. During the current work, we review the research progress and synthesis methods in recent years. The main influencing factors of Si QDs in different preparation methods (physical and chemical) and different application properties (fluorescence detection, solar cell, photocatalyst, and composite) are compared and discussed in detail. Therefore, this paper aims to find promising preparation methods for different application fields and provide a clear direction for researchers to study Si QDs in different directions.

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/content/journals/cnano/10.2174/1573413717666210412152255
2022-03-01
2024-12-25
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/content/journals/cnano/10.2174/1573413717666210412152255
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