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image of A Study on Oxygen Vacancy Resistance Mechanism of V2O5

Abstract

Introduction: Due to its magnetic and semiconductor properties, VO has shown tremendous potential in resistive switching memory. Method: Therefore, this paper investigates the resistive mechanism of oxygen vacancies in VO. The formation energies of different oxygen vacancies are calculated. Results: The results indicate that oxygen vacancies tend to form single-component conductive filaments. In mixed oxygen vacancies clusters, the charge transfer characteristics and density of states of the VO-V13 vacancies are the most significant, which is consistent with the analysis of formation energy data. Conclusions: Additionally, the charge transfer of cluster oxygen vacancies was calculated, showing that V atoms directly connected to oxygen vacancies tend to lose electrons, while adjacent oxygen atoms are more likely to gain electrons. In VO-V12 and VO-V13, the number of electrons obtained by O2 and O16 exceeds the average by 36.4% and 33.2%. Thus, the formation of oxygen vacancies effectively improves the resistance characteristics of the VO.

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2024-10-17
2024-12-26

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/content/journals/cnano/10.2174/0115734137333910241009071115
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A Study on Oxygen Vacancy Resistance Mechanism of V2O5
Bentham Science Publishers ; https://doi.org/10.2174/0115734137333910241009071115
/content/journals/cnano/10.2174/0115734137333910241009071115
/content/journals/cnano/10.2174/0115734137333910241009071115
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  • Article Type:     Research Article
Keywords: oxygen vacancy ; first principles ; Conductive filaments ; RRAM ; resistance mechanism ; vanadium pentoxide

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