An Overview of Reliability Issues and Challenges Associated with AlGaN/GaN HEMT
- Authors: G. Purnachandra Rao1, Tanjim Rahman2, E. Raghuveera3, Trupti Ranjan Lenka4
-
View Affiliations Hide AffiliationsAffiliations: 1 Department of Electronics and Communication Engineering, National Institute of Technology Silchar, 788010, Assam, India 2 Department of Electronics and Communication Engineering, National Institute of Technology Silchar, 788010, Assam, India 3 Department of Electronics and Communication Engineering, National Institute of Technology Silchar, 788010, Assam, India 4 Department of Electronics and Communication Engineering, National Institute of Technology Silchar, 788010, Assam, India
- Source: Nanoelectronic Devices and Applications , pp 148-159
- Publication Date: July 2024
- Language: English
An Overview of Reliability Issues and Challenges Associated with AlGaN/GaN HEMT, Page 1 of 1
< Previous page | Next page > /docserver/preview/fulltext/9789815238242/chapter-7-1.gif
GaN-based High Electron Mobility Transistors are currently exhibiting exceptional performance in areas that handle high power, high frequency, etc. In particular, their outstanding electrical control characteristics that were demonstrated in HEMT (High Electron Mobility Transistors) based on GaN material made them very promising due to their fundamental and intrinsic unparalleled properties over the existing technologies that use Si-based materials. When a technology enters the manufacturing stage, reliability remains an important challenge. So, it is essential to strongly encourage the knowledge database on the reliability of GaN-based HEMTs. This study focuses on the primary issues that have impacted the reliability of GaNbased HEMTs in both the past and the present. The article focuses on the main problems that have affected the dependability of GaN-based HEMTs both in the past and present, followed by difficulties and potential future applications.
-
From This Site
/content/books/9789815238242.chapter-7dcterms_subject,pub_keyword-contentType:Journal105
