Next Generation High-Power Material Ga2O3 : Its Properties, Applications, and Challenges
- Authors: M. Nomitha Reddy1, Deepak Kumar Panda2
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View Affiliations Hide AffiliationsAffiliations: 1 Department of Electronics and Communication Engineering, NIT Mizoram, Aizawl, 796001, India 2 Department of ECE, Amrita School of Engineering, Amrita Vishwa Vidyapeetham, Amaravati Campus 522503, Andhra Pradesh, India
- Source: Nanoelectronic Devices and Applications , pp 160-188
- Publication Date: July 2024
- Language: English
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Gallium Oxide (Ga2O3 ) is an emerging semiconductor material that has gained significant attention in the field of electronics due to its unique properties and potential applications. Gallium Oxide has a very large bandgap of around 4.8-4.9 eV; this wide bandgap allows gallium oxide to withstand higher breakdown voltages and is well-suited for high-power switches, high-voltage rectifiers and inverters. Gallium oxide-based power electronics can operate at higher voltages and temperatures, enabling efficient energy conversion and reducing losses. In this book, we have discussed the physical properties, growth, and deposition methods along with the various applications of Gallium Oxide. We have even simulated a Gallium Oxide FINFET and discussed its electrical parameters behavior and various RFIC parameters for different fin widths.
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