Study of DC Characteristics of AlGaN/GaN HEMT and its Compact Models
- Authors: G. Purnachandra Rao1, Tanjim Rahman2, Trupti Ranjan Lenka3
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View Affiliations Hide AffiliationsAffiliations: 1 Department of Electronics and Communication Engineering, National Institute of Technology Silchar, 788010, Assam, India 2 Department of Electronics and Communication Engineering, National Institute of Technology Silchar, 788010, Assam, India 3 Department of Electronics and Communication Engineering, National Institute of Technology Silchar, 788010, Assam, India
- Source: Nanoelectronic Devices and Applications , pp 130-147
- Publication Date: July 2024
- Language: English
Study of DC Characteristics of AlGaN/GaN HEMT and its Compact Models, Page 1 of 1
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In this chapter, studies of the DC characteristics of AlGaN/GaN HEMT (High Electron Mobility Transistor) and its compact model are presented. It includes the working principles of different HEMT models, their advantages, and their use in high-frequency and high-power applications. The chapter provides a distinct idea about the properties of different models (EE, ASM, and MVGS) and their DC characteristics, which are generated by the Advanced Design System (ADS). The performance analysis of the proposed HEMT models in terms of high electron mobility, high-power and high-frequency operation, low noise amplification, and high thermal stability, along with challenges and future scopes, is discussed in this chapter.
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