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2000
Volume 12, Issue 3
  • ISSN: 2210-6812
  • E-ISSN: 2210-6820

Abstract

Background: In the nanometer regime, the impact of temperature is quite dominant in the device characteristics. Objectives: A comparative study of L-shaped Tunnel Field Effect Transistors (TFETs) and Ushaped TFETs with temperature variation. Methods: The effect of temperature has been studied for the device characteristics in terms of surface potential, electric field, and transfer characteristics using the Synopsys TCAD tool. Results: The ON current and OFF current of L-shaped and U-shaped TFETs structure shows the enhanced performance due to the large area of channel length. The addition of n-type pocket under the source enhances both devices ON current and OFF current. Both L-shaped and U-shaped TFETs structures are easy to fabricate and cost-effective due to the use of already established Si technology. Conclusion: In next-generation devices, the superior performance of L and U-shaped TFETs structure makes it a promising contender for low power applications as their subthreshold swing (SS) is less than 60 mV/decade is observed.

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/content/journals/nanoasi/10.2174/2210681212666220428120240
2022-06-01
2025-03-15
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  • Article Type:
    Research Article
Keyword(s): channel length; L-shaped; ON current; Temperature; tunnel field effect transistor; U-shaped
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