Comparative Study of L-shaped and U-shaped TFET Device with Temperature Variations

Background: In the nanometer regime, the impact of temperature is quite dominant in the device characteristics. Objectives: A comparative study of L-shaped Tunnel Field Effect Transistors (TFETs) and Ushaped TFETs with temperature variation. Methods: The effect of temperature has been studied for the device characteristics in terms of surface potential, electric field, and transfer characteristics using the Synopsys TCAD tool. Results: The ON current and OFF current of L-shaped and U-shaped TFETs structure shows the enhanced performance due to the large area of channel length. The addition of n-type pocket under the source enhances both devices ON current and OFF current. Both L-shaped and U-shaped TFETs structures are easy to fabricate and cost-effective due to the use of already established Si technology. Conclusion: In next-generation devices, the superior performance of L and U-shaped TFETs structure makes it a promising contender for low power applications as their subthreshold swing (SS) is less than 60 mV/decade is observed.