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2000
Volume 1, Issue 4
  • ISSN: 2210-2981
  • E-ISSN: 2210-2914

Abstract

Background: Topological insulator (TI), BiTe is a new class of quantum materials. Having ultralow dissipation surface states, TIs hold great promise toward different potential applications. Micro-Raman spectroscopy is a conventional and non-destructive technique, which has been widely used to characterize the structural and electronic properties of thermoelectric materials. Objective: The objective of this study is to review power dependent and temperature dependent Raman spectra of BTe nanoflakes on SiO/Si substrate to estimate the temperature coefficient and thermal conductivity of these flakes for possible application of this material in thermoelectrics. Methods: BiTe flakes of different thicknesses were mechanically exfoliated from high-quality bulk BiTe crystal using scotch tape on 300 nm SiO/ Si substrates. The power dependent and temperature dependent Raman spectra were acquired with the help of HORIBA LabRAM confocal micro- Raman system in a backscattering geometry. Results: The observed power dependent and temperature dependent Raman spectra of BiTe nanoflakes follow the same trend as discussed in various pieces of literature. From temperature coefficient and power coefficient values, the in-plane thermal conductivity has been estimated, which is found to be in the order of 102 W/m-K. The enhancement in the thermal conductivity suggests that the underlying substrate significantly affects the heat dissipation of the BiTe flake based on the coupling strength with BiTe. Conclusion: This work provides a good platform to understand the role of the substrate on the thermal conductivity of exfoliated BiTe nanoflakes and this study can be extended to other substrates.

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/content/journals/ccs/10.2174/2210298101666210412101104
2021-07-01
2025-05-18
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