Ge-Channel Nanosheet FinFETs for Nanoscale Mixed Signal Application
- Authors: Nawal Topno1, Raghunandan Swain2, Dinesh Kumar Dash3, M. Suresh4
-
View Affiliations Hide AffiliationsAffiliations: 1 Department of Electronics and Telecommunication, Parala Maharaja Engineering College, Berhampur, Odisha, 761003, India 2 Department of Electronics and Telecommunication, Parala Maharaja Engineering College, Berhampur, Odisha, 761003, India 3 Department of Electronics and Telecommunication, Parala Maharaja Engineering College, Berhampur, Odisha, 761003, India 4 School of Electronics Engineering, VIT Bhopal University, Bhopal, Madhya Pradesh 466114, India
- Source: Nanoelectronic Devices and Applications , pp 246-257
- Publication Date: July 2024
- Language: English
Preview this chapter:
Ge-Channel Nanosheet FinFETs for Nanoscale Mixed Signal Application, Page 1 of 1
< Previous page | Next page > /docserver/preview/fulltext/9789815238242/chapter-13-1.gif
Due to the shortening of channel length in accordance with Moores law, short channel effects degrade transistor performance. This chapter explains the emerging nanosheet fin field effect transistor (FinFET) design and operation through technology computer-aided design (TCAD) tool-based design and simulation. A 10 nm node Ge-channel nanosheet FinFET is designed and simulated by incorporating quantum transport models in both DC and AC environments. Corresponding short channel effect (SCE) parameters are obtained and compared with Si-channel nanosheet FinFETs. Further, device feasibility for low-power and high-frequency applications is studied.
Hardbound ISBN:
9789815238259
Ebook ISBN:
9789815238242
-
From This Site
/content/books/9789815238242.chapter-13dcterms_subject,pub_keyword-contentType:Journal105
/content/books/9789815238242.chapter-13
dcterms_subject,pub_keyword
-contentType:Journal
10
5
Chapter
content/books/9789815238242
Book
false
en
