InAs Raised Buried Oxide SOI-TFET with N-type Si1-xGex Pocket for Low-Power Applications
- Authors: Ashish Kumar Singh1, Satyabrata Jit2
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View Affiliations Hide AffiliationsAffiliations: 1 Chitkara University Institute of Engineering and Technology, Chitkara University, Punjab, India 2 Department of Electronics Engineering, Indian Institute of Technology (BHU), Varanasi, India
- Source: Nanoelectronic Devices and Applications , pp 203-217
- Publication Date: July 2024
- Language: English
InAs Raised Buried Oxide SOI-TFET with N-type Si1-xGex Pocket for Low-Power Applications, Page 1 of 1
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In this chapter, we studied the device-level performance based on electrostatic parameters of a source pocket engineered raised buried oxide (RBOX) SOI tunnel field-effect transistor (SP-RBOX-SOITFET). Using Si1-xGex pockets between the channel and the source, steep subthreshold swing transistors can be obtained. In the pocket, a narrow n+ region is formed by a tunneling junction between the p+ region of the source. In order to reduce subthreshold swing, the tunneling width must be narrowed, and the lateral electric field must be increased. So, the studied structure can be used to design the dielectric modulated biomolecule biosensors for IOTs applications. Simulation analyses of the proposed work has been conducted using the Silvaco ATLAS TCAD tool.
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