Impact of Gaussian Traps on the Characteristics of L-shaped Tunnel Field-effect Transistor

Background: Internet of Things (IoT) applications require high-performance TFET devices that can be efficiently integrated with the cyber world and physical world.Objectives: The impact of introducing Gaussian traps in hetero-junction tunneling-field-effecttransistors (TFET) with an L-shaped gate is presented.Methods: The 2-D TCAD study of different characteristics, like input, output characteristics, and noise spectral density with trap and without trap, has been performed.Results: The simulation results showed that in L-shaped TFET (L_TFET), the high on-current of 1.930^-5 A/μm, low off-current/leakage current of 1.090^-13 A/μm, and steep sub-threshold slope (SS) of 24 mV/dec without traps and on-current of 8.460^-6 A/μm, off-current of 2.860^{- 11} A/μm, and degraded SS with traps are observed. They also indicated that the presence of traps reduces gate-drain capacitance (Cgd), while gate-source capacitance (Cgs) remains unaffected. In addition, in L_TFET, the drain current noise spectral density (SID) of 7.63 E-21 (A²/Hz) at LF and 2.69 E-26 (A²/Hz) at HF while the noise voltage spectral density (SVG) of 7.33 E-4 (V²/Hz) at LF and 2.59 E-15 (V²/Hz) at HF without traps have been investigated in this study. The inverse dependence of drain current noise spectral density on frequency has been observed to lower the effect of noise at HF.Conclusion: It can be concluded that the proposed L_TFET device is free from ambipolarity conduction and can be well-suited for low-power applications.