Memristors as Prospective Devices for Silicon and Post-Silicon Eras: Theory, Applications and Perspectives
- Authors: Hirakjyoti Choudhury1, Rupam Goswami2, Gajendra Kumar3, Nayan M. Kakoty4
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View Affiliations Hide AffiliationsAffiliations: 1 Department of Electronics and Communication Engineering, Tezpur University, Assam 784028, India 2 Department of Electronics and Communication Engineering, Tezpur University, Assam-784028, India 3 Department of Molecular Biology, Cell Biology & Biochemistry (MCB), Brown University, USA 4 Department of Electronics and Communication Engineering, Tezpur University, Assam-784028, India
- Source: Nanoelectronic Devices and Applications , pp 297-334
- Publication Date: July 2024
- Language: English
Memristors as Prospective Devices for Silicon and Post-Silicon Eras: Theory, Applications and Perspectives, Page 1 of 1
< Previous page | Next page > /docserver/preview/fulltext/9789815238242/chapter-16-1.gifSilicon-based semiconductor devices have sustained Moores Law for a long time. However, with the downscaling of devices, the focus of the industry has shifted toward alternative materials having application-specific properties. Memristors have emerged as one of the prospective semiconductor devices for multi-faceted applications due to their data retention properties, convenient fabrication, and less complex circuit architectures. The dual resistance states of memristors have been employed in multiple intelligent applications, including brain-inspired computing architectures, methods, cryptography frameworks, and biological sensing. The non-volatility of memory and compatibility with CMOS-style architecture have led to a wide range of domains that are capable of exploiting the properties of memristors. A number of mathematical models have also been developed to explain the working principle of memristors. This chapter reviews the theory and applications of memristors for the silicon era and presents the future perspectives of these devices for the post-silicon era.
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